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LS3250C_TO-71 Fiches technique(PDF) 1 Page - Micross Components

No de pièce LS3250C_TO-71
Description  MONOLITHIC DUAL NPN TRANSISTOR
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Fabricant  MICROSS [Micross Components]
Site Internet  http://www.micross.com
Logo MICROSS - Micross Components

LS3250C_TO-71 Fiches technique(HTML) 1 Page - Micross Components

  LS3250C_TO-71 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
TIGHT MATCHING  ≤ 10mV 
THERMAL TRACKING ≤ 15µV / °C
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
TBD 
Maximum Currents 
Collector Current 
50mA 
Maximum Voltage 
Collector to Collector Voltage 
80V 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
‐‐ 
10 
mV 
I= 10mA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
‐ 
15 
µV/°C 
I= 10µA, VCE = 5V 
TA = ‐40°C to +85°C 
|IB1 – IB2 
Base Current Differential 
‐‐ 
‐‐ 
10 
nA 
I= 10µA, VCE = 5V 
|∆ (IB1 – IB2)|/ ∆T 
Base Current Differential 
 Change with Temperature 
‐‐ 
‐‐ 
1.0 
nA/°C 
IC = 10µA, VCE = 5V 
TA = ‐40°C to +85°C 
hFE1 /hFE2 
DC Current Gain Differential 
‐‐ 
‐‐ 
15 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
20 
‐‐ 
‐‐ 
IC = 10mA, IE = 0 
BVCEO 
Collector to Emitter Voltage 
20 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO
2 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVCCO 
Collector to Collector Voltage 
80 
‐‐ 
‐‐ 
I= 10µA, I= 0 
 
hFE 
 
DC Current Gain 
50 
‐‐ 
‐‐ 
 
I= 10µA, VCE = 5V 
40 
‐‐ 
‐‐ 
 
I= 100µA, VCE = 5V 
40 
‐‐ 
‐‐ 
 
I= 1mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
1.2 
I= 100mA, I= 10mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0A, VCB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0A, VCB = 20V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0A, VCB = 10V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
nA 
VCC = ±80V 
fT 
Current Gain Bandwidth Product 
‐‐ 
‐‐ 
600 
MHz 
I= 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 100µA,  VCE = 5V, BW=200Hz, RB= 10Ω,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
 
 
LS3250C
MONOLITHIC DUAL
NPN TRANSISTOR
LS3250C Features:
Tight matching
Low Output Capacitance
The LS3250C is a monolithic pair of NPN transistors
mounted in a single TO-71 package. The monolithic
dual chip design reduces parasitics and is ideal for use
in tracking applications.
The hermetically sealed TO-71 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
Linear Systems Log Conformance Monolithic Dual NPN
Available Packages:
LS3250C in TO-71
LS3250C available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
TO-71 (Bottom View)


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