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LSJ202 Fiches technique(PDF) 1 Page - Micross Components

No de pièce LSJ202
Description  N-CHANNEL JFET
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Fabricant  MICROSS [Micross Components]
Site Internet  http://www.micross.com
Logo MICROSS - Micross Components

LSJ202 Fiches technique(HTML) 1 Page - Micross Components

  LSJ202 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web:
www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J202 
LOW CUT OFF VOLTAGE 
VGS(off) ≤ 1.5 
HIGH GAIN 
A= 80 V/V 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
350mW 
MAXIMUM CURRENT
Forward Gate Current (Note 1) 
50mA 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
VGDS = ‐40V 
Gate to Source Voltage 
VGSS = ‐40V 
  
 
 
LSJ202 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐40 
‐‐ 
‐‐ 
 
IG = 1µA,   VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐0.8 
‐‐ 
‐4 
VDS = 15V, ID = 10nA 
IDSS 
Drain to Source Saturation Current (Note 2) 
0.9 
‐‐ 
4.5 
mA 
VDS = 15V,  VGS = 0V 
IGSS 
Gate Reverse Current ‐2 
‐‐ 
‐100  
pA 
VGS = ‐20V,  VDS = 0V 
IG 
Gate Operating Current 
‐‐ 
‐2 
‐‐ 
VDG = 10V,  ID = 0.1mA 
ID(off) 
Drain Cutoff Current 
‐‐ 
 2 
‐‐ 
VDS = 15V, VGS = ‐5V 
gfs 
Forward Transconductance 
‐‐ 
‐‐ 
mS 
VDS = 15V,   VGS = 0V , f = 1kHz 
Ciss 
Input Capacitance 
‐‐ 
4.5 
‐‐ 
pF 
VDS = 15V, VGS = 0V, f = 1MHz 
 
Crss 
Reverse Transfer Capacitance 
‐‐ 
1.3 
‐‐ 
en 
Equivalent Noise Voltage 
‐‐ 
‐‐ 
nV/√Hz 
VDS = 10V,  ID = 1mA , f = 1kHz 
Micross Components Europe
Available Packages:
LSJ202 in TO-92
LSJ202 in bare die.
Please contact Micross for full
package and die dimensions
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ202 serviceability may be impaired.  
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% 
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
TO-92 (Bottom View)
LSJ202
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J202
The LSJ202 is a high gain N-Channel JFET
This n-channel JFET is optimised for high gain. The
part is particularly suitable for use in low power or high
impedance amplifiers. The TO-92 package is well
suited for cost sensitive applications and mass
production.
(See Packaging Information).
LSJ202 Applications:
Battery powered amplifiers
Audio Pre-Amplifiers
Infra-Red Detector Amplifiers
LSJ202 Benefits:
High Input Impedance
Low Cutoff Voltage
Low Noise


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