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STK401-030 Fiches technique(PDF) 6 Page - Sanyo Semicon Device |
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STK401-030 Fiches technique(HTML) 6 Page - Sanyo Semicon Device |
6 / 9 page External Circuit Diagram Heat Radiation Design Considerations The radiator thermal resistance θc-a required for total substrate power dissipation Pd in the STK401-050 is determined as: Condition 1: IC substrate temperature Tc not to exceed 125°C. Pd x θc-a+Ta <125°C ······························· (1) where Ta is set assured ambient temperature. Condition 2: Power transistor junction temperature Tj not to exceed 150°C. Pd x θc-a+Pd/N x θj-c+Ta<150°C·············(2) where N is the number of power transistors and θj-c is the thermal resistance per power transistor chip. However, power transistor power consumption is Pd equally divided by N units. Expressions (1) and (2) can be rewritten based on θc-a to yield: θc-a<(125–Ta)/Pd ······································(1)' θc-a<(150–Ta)/Pd–θj-c/N··························(2)' The required radiator thermal resistance will satisfy both of these expressions. From expressions (1)' and (2)', the required radiator thermal resistance can be determined once the following specifications are known: • Supply voltage VCC • Load resistance RL • Assured ambient temperature Ta The total substrate power consumption when STK401-050 VCC is ±26 V and RL is 6 Ω, for a continuous sine wave signal, is a maximum of 45.7W (Fig. 1). In general, when this sort of continuous signal is used for estimation of power consumption, the Pd used is 1/10th of PO max (slight variation depending on safety standard). Pd=27.7W (1/10 PO max=during 3W) No. 4343-6/9 STK401-050 |
Numéro de pièce similaire - STK401-030 |
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Description similaire - STK401-030 |
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