FDS2570 datasheet(9/12 Pages) FAIRCHILD

No de pièce	FDS2570

Description	Power Converter Topology and MOSFET Selection for 48-V Telecom

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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9

Rev. A, June 2001

levels approaching 390 watts are theoretically possible. Paralleling FETs allows this number to

be increased. The output waveforms of the bridge design look the same as the push pull. The

FET drain voltages are depicted in Figure 11.

Figure 10. The basic circuit design for a full-bridge regulator topology.

Figure 11. Voltage and current waveforms for the full-bridge regulator.

D1

D2

L1

T1

Q2

Q4

Q1

VIN

Gate 1

Gate

U1

PWM

Gate

Input 1

Isolation

Input 2

GND

Source 1

Gate 2

Source 2

RTN

C2

+

C1

+

VOUT

Q3

VGS(Q2&Q3)

VGS(Q1&Q4)

PWM'ED EDGE

Can vary from

0 to VIN

-VIN

VDS(Q1&Q4)

VDS(Q2&Q3)

VSW2

VSAT

IPK

0

2

TIME

SW

1-4

SW

2-3

VIN

ISW2

0

TIME

IMIN

Can vary from

0 to VIN

-VIN

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FDS2570 Fiches technique(PDF) 9 Page - Fairchild Semiconductor

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