2

GaAs MMIC VSAT Power Amplifier 2.0 W

5.9 - 6.4 GHz

Rev. V5

AM42-0040

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Typical Bias Configuration

4,5,6,7,8

Absolute Maximum Ratings

1,2,3

Parameter

Absolute Maximum

Input Power

+23 dBm

+12 Volts

-3 Volts

+12 Volts

1700 mA

Channel Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. M/A-COM Technology does not recommend sustained

operation near these survivability limits.

3. Case Temperature (TC) = +25°C.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Linear Gain

dB

27

30

—

Input VSWR

Ratio

—

2.3:1

2.7:1

Output VSWR

Ratio

—

3.0:1

—

Output Power

dBm

31.7

33.0

34.5

Output Power vs. Frequency

dB

—

1.0

1.5

Output Power vs. Temperature

dB

—

±0.4

—

Drain Bias Current

mA

900

1050

1100

Gate Bias Voltage

V

-2.4

-1.2

-0.4

Gate Bias Current

mA

—

5

20

Thermal Resistance

25°C Heat Sink

°C/W

—

5.6

—

Second Harmonic

dBc

—

-35

—

Third Harmonic

dBc

—

-45

—

V

2

—

—

4. Nominal bias is obtained by first connecting -2.4 volts to pin 5

(VGG), followed by connection +9 volts to pin 10 (VDD).

Note sequence. Adjust VGG for a drain current of 1050 mA

typical.

5. RF ground and thermal interface is the flange (case bottom).

Adequate heat sinking is required.

6. No DC bias voltage appears at the RF ports.

7. For optimum IP3 performance, the VDD bypass capacitors

should be placed within 0.5 inches of the VDD leads.

8. Resistor and capacitors surrounding the amplifier are

suggestions and not included as part of the AM42-0040.