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AM42-0040_V5 Fiches technique(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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AM42-0040_V5 Fiches technique(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 4 page 2 GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Rev. V5 AM42-0040 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Bias Configuration 4,5,6,7,8 Absolute Maximum Ratings 1,2,3 Parameter Absolute Maximum Input Power +23 dBm VDD +12 Volts VGG -3 Volts VDD - VGG +12 Volts IDD 1700 mA Channel Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM Technology does not recommend sustained operation near these survivability limits. 3. Case Temperature (TC) = +25°C. Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < -10 dBm dB 27 30 — Input VSWR PIN < -10 dBm Ratio — 2.3:1 2.7:1 Output VSWR PIN < -10 dBm Ratio — 3.0:1 — Output Power PIN = +10 dBm, IDD = 1050 mA Typ. dBm 31.7 33.0 34.5 Output Power vs. Frequency PIN = +10 dBm, IDD = 1050 mA Typ. dB — 1.0 1.5 Output Power vs. Temperature (with respect to TA = 25°C) PIN = +10 dBm, IDD = 1050 mA Typ. TA = -40°C to +70°C dB — ±0.4 — Drain Bias Current PIN = +10 dBm mA 900 1050 1100 Gate Bias Voltage PIN = +10 dBm, IDD = 1050 mA Typ. V -2.4 -1.2 -0.4 Gate Bias Current PIN = +10 dBm, IDD = 1050 mA Typ. mA — 5 20 Thermal Resistance 25°C Heat Sink °C/W — 5.6 — Second Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -35 — Third Harmonic PIN = +10 dBm, IDD = 1050 mA Typ. dBc — -45 — VDET V 2 — — 4. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connection +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical. 5. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. 6. No DC bias voltage appears at the RF ports. 7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads. 8. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0040. |
Numéro de pièce similaire - AM42-0040_V5 |
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Description similaire - AM42-0040_V5 |
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