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Si8241BB-B-IS1 Fiches technique(PDF) 8 Page - Silicon Laboratories |
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Si8241BB-B-IS1 Fiches technique(HTML) 8 Page - Silicon Laboratories |
8 / 30 page Si824x 8 Rev. 0.2 Table 2. Absolute Maximum Ratings1 Parameter Symbol Min Typ Max Units Storage Temperature2 TSTG –65 — +150 °C Ambient Temperature under Bias TA –40 — +125 °C Input-side Supply Voltage VDDI –0.6 — 6.0 V Driver-side Supply Voltage VDDA, VDDB –0.6 — 30 V Voltage on any Pin with respect to Ground VIN –0.5 — VDD + 0.5 V Output Drive Current per Channel IO —— 10 mA Lead Solder Temperature (10 sec) — — 260 °C Latchup Immunity3 —— 100 V/ns Maximum Isolation (Input to Output) — — 2500 VRMS Maximum Isolation (Output to Output) — — 1500 VRMS Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. VDE certifies storage temperature from –40 to 150 °C. 3. Latchup immunity specification is for slew rate applied across GNDI and GNDA or GNDB. Table 3. Regulatory Information* CSA The Si824x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. 61010-1: Up to 300 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. 60950-1: Up to 300 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. VDE The Si824x is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. 60747-5-2: Up to 560 Vpeak for basic insulation working voltage. UL The Si824x is certified under UL1577 component recognition program. For more details, see File E257455. Rated up to 2500 VRMS isolation voltage for basic protection. *Note: Regulatory Certifications apply to 2.5 kVRMS rated devices, which are production tested to 3.0 kVRMS for 1 sec. For more information, see "6.Ordering Guide" on page 25. |
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