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BAP1321-03 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BAP1321-03
Description  Silicon PIN diode
Download  8 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAP1321-03 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BAP1321-03_01 Datasheet HTML 1Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 2Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 3Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 4Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 5Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 6Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 7Page - NXP Semiconductors BAP1321-03_01 Datasheet HTML 8Page - NXP Semiconductors  
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2001 May 11
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP1321-03
FEATURES
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz.
APPLICATIONS
• RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 ultra small SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
12
MAM406
Marking code: V8.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
60
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts ≤ 90 °C
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C


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