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BAP1321-03 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BAP1321-03 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 May 11 2 Philips Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES • High voltage, current controlled • RF resistor for RF attenuators and switches • Low diode capacitance • Low diode forward resistance • Very low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD323 ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage 12 MAM406 Marking code: V8. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 60 V IF continuous forward current − 100 mA Ptot total power dissipation Ts ≤ 90 °C − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
Numéro de pièce similaire - BAP1321-03_01 |
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Description similaire - BAP1321-03_01 |
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