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2N5153L Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce 2N5153L
Description  PNP POWER SILICON TRANSISTOR
Download  4 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5153L Fiches technique(HTML) 2 Page - Microsemi Corporation

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
T4-LDS-0132 Rev. 1 (091476)
Page 2 of 4
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
IC = 2.5Adc, VCE = 5Vdc
IC = 5Adc, VCE = 5Vdc
2N5151
2N5153
2N5151
2N5153
2N5151
2N5153
hFE
20
50
30
70
20
40
90
200
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
VCE(sat)
0.75
1.5
Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE
1.45
Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
VBE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz
2N5151
2N5153
|hfe|
6
7
Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1kHz
2N5151
2N5153
hfe
20
50
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
Cobo
250
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
ton
0.5
μs
Turn-Off Time
IC = 5Adc, IB1 = 500mAdc
IB2 = -500mAdc
RL = 6Ω
VBE(OFF) = 3.7Vdc
toff
1.5
μs


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