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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2N2907AUBC Fiches technique(PDF) 1 Page - Microsemi Corporation |
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2N2907AUBC Fiches technique(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 T4-LDS-0055 Rev. 4 (100247) Page 1 of 6 DEVICES LEVELS 2N2906A 2N2907A JANSM – 3K Rads (Si) 2N2906AL 2N2907AL JANSD – 10K Rads (Si) 2N2906AUA 2N2907AUA JANSP – 30K Rads (Si) 2N2906AUB 2N2907AUB JANSL – 50K Rads (Si) 2N2906AUBC 2N2907AUBC JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25°C PT (1) 0.5 W Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 °C THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient RθJA (1) 325 °C/W 1. See MIL-PRF-19500/291 for derating curves. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc V(BR)CEO 60 Vdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc ICBO 10 10 μAdc ηAdc Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 4.0Vdc IEBO 10 50 μAdc ηAdc Collector-Emitter Cutoff Current VCE = 50Vdc ICES 50 ηAdc TO-18 (TO-206AA) 2N2906A, 2N2907A 4 PIN 2N2906AUA, 2N2907AUA 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) |
Numéro de pièce similaire - 2N2907AUBC |
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Description similaire - 2N2907AUBC |
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