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2SD1784 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SD1784 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD1784 2010-03-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 10 V, IC = 0 ― ― 10 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ― ― V DC current gain hFE VCE = 2 V, IC = 150 mA 4000 ― ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.2 V Turn-on time ton ― 0.20 ― Storage time tstg ― 0.6 ― Switching time Fall time tf ― 0.3 ― μs Equivalent Circuit Marking Note 3: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. X N Part No. (or abbreviation code) Lot No. Note 3 COLLECTOR EMITTER BASE VCC = 15 V INPUT IB1 20 μs IB (1) = IB (2) = 1 mA DUTY CYCLE ≤ 1% IB2 OUTPUT |
Numéro de pièce similaire - 2SD1784_10 |
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Description similaire - 2SD1784_10 |
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