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2SD1411A Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SD1411A Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SD1411A 2009-12-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 5 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5 μA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 80 ― ― V hFE (1) (Note 2) VCE = 1 V, IC = 1 A 70 ― 240 DC current gain hFE (2) VCE = 1 V, IC = 4 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 0.4 A ― 0.25 0.5 V Base-emitter saturation voltage VBE (sat) IC = 4 A, IB = 0.4 A ― 0.9 1.4 V Transition frequency fT VCE = 4 V, IC = 1 A ― 10 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF Turn-on time ton ― 0.4 ― Storage time tstg ― 2.5 ― Switching time Fall time tf IB1 = 0.3 A,IB2 = 0.3 A duty cycle ≤ 1% ― 0.5 ― μs Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 20 μs VCC = 30 V Output IB2 IB1 Input Lot No. Note 3 D1411A Characteristics indicator Part No. (or abbreviation code) |
Numéro de pièce similaire - 2SD1411A_09 |
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Description similaire - 2SD1411A_09 |
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