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2SD1411A Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SD1411A
Description  High-Current Switching Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1411A Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SD1411A
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
5
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 1 A
70
240
DC current gain
hFE (2)
VCE = 1 V, IC = 4 A
30
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.4 A
0.25
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.4 A
0.9
1.4
V
Transition frequency
fT
VCE = 4 V, IC = 1 A
10
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
200
pF
Turn-on time
ton
0.4
Storage time
tstg
2.5
Switching time
Fall time
tf
IB1 = 0.3 A,IB2 = 0.3 A
duty cycle ≤ 1%
0.5
μs
Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
20 μs
VCC = 30 V
Output
IB2
IB1
Input
Lot No.
Note 3
D1411A
Characteristics
indicator
Part No. (or abbreviation code)


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