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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SC4738F Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SC4738F Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC4738F 2003-03-27 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications · High voltage and high current: VCEO = 50 V, IC = 150 mA (max) · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 120~400 · Complementary to 2SA1832F · Small package Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA DC current gain hFE (Note) VCE = 6 V, IB = 2 mA 120 ¾ 400 Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ¾ 0.1 0.25 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ¾ ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 2.0 3.5 pF Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2HA1A Weight: 2.3 mg (typ.) |
Numéro de pièce similaire - 2SC4738F_03 |
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Description similaire - 2SC4738F_03 |
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