MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Unit

V

V

V

Rating

MMBTH10

NPN 1.1 GHz RF Transistor

(Ta=25 C)

Device Marking

MMBTH10=3EM , HT10

SOT-23

1

2

3

COLLECTOR

EMITTER

BASE

Lead(Pb)-Free

P b

Collector Current - Continuous

mA

1. Tj = 25°C unless otherwise specified.

25

30

3

50

TJ

Tstg

Junction Temperature

Storage Temperature

+150

-55~150

°C

°C

FEATURES

Designed for VHF/UHF Amplifier Applications

and High Output VHF oscillators.

High Current Gain Bandwidth product.

Thermal Resistance , Junction Ambient

RθJA

556

°C/W

Ideal for Mixer and RF Amplifier Application with Collector Current in the

100mA~20mA Range in Common emitter or Common base mode of operations.

WEITRON

http://www.weitron.com.tw

1/6

09-Feb-07

Symbol

VCEO

VCBO

VEBO

I C

Value

PD

225

mW

TA =25°C

Derate above =25°C

1.8

mW/°C