SIZ700DT datasheet(5/12 Pages) VISHAY

No de pièce	SIZ700DT

Description	N-Channel 20-V (D-S) MOSFETs Compliant to RoHS Directive 2002/95/EC

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 69090

S09-0534-Rev. A, 06-Apr-09

www.vishay.com

5

Vishay Siliconix

SiZ700DT

New Product

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 25 °C

TJ = - 50 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

-50

-25

0

25

50

75

100

125

150

ID = 250 µA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.000

0.005

0.010

0.015

0.020

0.025

0.030

012

345

67

8

910

TJ = 25 °C

TJ =125 °C

VGS - Gate-to-Source Voltage (V)

0

10

20

30

40

50

60

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 µs

BVDSS Limited

1ms

10 ms

1 s, 10 s

100 s, DC

10 µs

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Limited byRDS(on)*

100 ms

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