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DMG4800LFG Fiches technique(PDF) 2 Page - Diodes Incorporated |
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DMG4800LFG Fiches technique(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMG4800LFG Document number: DS31785 Rev. 3 - 2 2 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 11 15 17 24 m Ω VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A Forward Transfer Admittance |Yfs| - 8 - S VDS = 10V, ID = 9A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss - 798 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 128 - pF Reverse Transfer Capacitance Crss - 122 - pF Gate Resistance Rg - 1.37 - Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 9.47 - nC VGS = 5V, VDS = 15V, ID = 9A Gate-Source Charge Qgs - 1.87 - nC Gate-Drain Charge Qgd - 5.60 - nC Turn-On Delay Time tD(on) - 5.03 - ns VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A Turn-On Rise Time tr - 4.50 - ns Turn-Off Delay Time tD(off) - 26.33 - ns Turn-Off Fall Time tf - 8.55 - ns Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 0 0.5 1 1.5 2 0 5 10 15 20 30 25 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V) DS V = 2.0V GS V = 3.0V GS V = 4.5V GS V = 10V GS V = 2.5V GS 0 5 10 15 20 25 30 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 5V DS |
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