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DZT3150 Fiches technique(PDF) 1 Page - Diodes Incorporated |
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DZT3150 Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DZT3150 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams (approximate) 2 3 4 1 SOT-223 3 1 2,4 COLLECTOR BASE EMITTER 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 5.0 A Base Current IB 1.0 A Power Dissipation PD 1 (Note 3) 2 (Note 4) W Thermal Resistance, Junction-to-Ambient RθJA 125 (Note 3) 62.5 (Note 4) °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 25 ⎯ ⎯ V IC = 10mA, IB = 0 Collector Cutoff Current ICBO ⎯ ⎯ 1.0 μA VCB = 50V, IE = 0 Emitter Cutoff Current IEBO ⎯ ⎯ 1.0 μA VEB = 7.0V, IC = 0 ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.35 0.50 V V IC = 3.0A, IB = 150mA IC = 4.0A, IB = 200mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1.10 1.40 V V IC = 3.0A, IB = 150mA IC = 4.0A, IB = 200mA DC Current Gain hFE 250 150 50 ⎯ 500 ⎯ ⎯ ⎯ IC = 500mA, VCE = 2.0V IC = 2.0A, VCE = 2.0V IC = 5.0A, VCE = 2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT ⎯ 150 ⎯ MHz IC = 50mA, VCE = 6.0V, f = 200MHz Output Capacitance Cobo ⎯ ⎯ 50 pF VCB = 10V, IE = 0, f = 1MHz Note: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 3. 4. Device mounted on Polyimide PCB with a copper area of 1.8cm 2. 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2% DS30785 Rev. 4 - 2 1 of 4 www.diodes.com DZT3150 © Diodes Incorporated |
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