ZJJ00531BED

This product complies with the RoHS Directive (EU 2002/95/EC).

Publication date: February 2010

1

DMA20101

Silicon PNP epitaxial planar type

For general amplification



Features



Contributes to miniaturization of sets, reduction of component count.



Eco-friendly Halogen-free package



Basic Part Number

Dual DSA2001 (Common emitter)



Packaging

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)



Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

–60

V

Collector-emitter voltage (Base open)

–50

V

Emitter-base voltage (Collector open)

–7

V

Collector current

–100

mA

Peak collector current

–200

mA

Total power dissipation

300

mW

Junction temperature

150

°

C

Storage temperature

–55 to +150

°

C



Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

–60

V

Collector-emitter voltage (Base open)

–50

V

Emitter-base voltage (Collector open)

–7

V

Collector-base cutoff current (Emitter open)

– 0.1

µA

Collector-emitter cutoff current (Base open)

–100

µA

Forward current transfer ratio

210

460



(Small/Large)

0.50

0.99



Collector-emitter saturation voltage

– 0.2

– 0.5

V

Transition frequency

150

MHz

Collector output capacitance

(Common base, input open circuited)

2

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Ratio between 2 elements



Package



Code

Mini5-G3-B



Pin Name

1: Base (Tr1)

4: Collector (Tr2)

2: Emitter (Common) 5: Collector (Tr1)

3: Base (Tr2)



Marking Symbol: A0



Internal Connection

(C2)

4

Tr1

Tr2

(C1)

5

1

(B1)

3

(B2)

2

(E)