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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DZTA42 Fiches technique(PDF) 1 Page - Diodes Incorporated |
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DZTA42 Fiches technique(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DS30582 Rev. 5 - 2 1 of 4 www.diodes.com DZTA42 © Diodes Incorporated DZTA42 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DZTA92) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation at @TA = 25°C (Note 3) Pd 1 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 125 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 300 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 ⎯ ⎯ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ ⎯ V IE = 100μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ 0.1 μA VCB = 200V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ 0.1 μA VEB = 6V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.5 V IC = 20mA, IB = 2mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 0.9 V IC = 20mA, IB = 2mA 25 ⎯ ⎯ IC = 1mA, VCE = 10V 40 ⎯ ⎯ IC = 10mA, VCE = 10V DC Current Gain hFE 40 ⎯ ⎯ ⎯ IC = 30mA, VCE = 10V SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 50 ⎯ ⎯ MHz IC = 10mA, VCE = 20V, f = 100MHz Output Capacitance Cobo ⎯ ⎯ 3 pF VCB = 20V, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.052”; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse Test: Pulse width = 300 μs, Duty Cycle ≤ 2% SOT-223 TOP VIEW Schematic and Pin Configuration 3 1 2,4 COLLECTOR EMITTER BASE 2 3 4 1 4 3 2 1 C C B E |
Numéro de pièce similaire - DZTA42 |
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Description similaire - DZTA42 |
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