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BC807-xx-7-F Fiches technique(PDF) 1 Page - Diodes Incorporated |
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BC807-xx-7-F Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 3 page BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features • Ideally Suited for Automatic Insertion • Epitaxial Planar Die Construction • For Switching, AF Driver and Amplifier Applications • Complementary NPN Types Available (BC817) • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data DS11208 Rev. 17 - 2 1 of 3 www.diodes.com BC807-16/-25/-40 © Diodes Incorporated • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) • Pin Connections: See Diagram • Ordering Information: See Page 3 • Marking Information: See Page 3 - BC807-16 5A, K5A - BC807-25 5B, K5B - BC807-40 5C, K5C • Weight: 0.008 grams (approximate) SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0 ° 8 ° All Dimens mm ions in A E J L TOP VIEW M Maximum Ratings @T A = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -500 mA Peak Collector Current ICM -1000 mA Peak Emitter Current IEM -1000 mA Power Dissipation at TSB = 50°C (Note 1) Pd 310 mW Thermal Resistance, Junction to Substrate Backside (Note 1) RθJSB 320 °C/W Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 403 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @T A = 25°C unless otherwise specified Characteristic (Note 2) Symbol Min Typ Max Unit Test Condition DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 hFE 100 160 250 60 100 170 — 250 400 600 — — — — VCE = -1.0V, IC = -100mA VCE = -1.0V, IC = -300mA Collector-Emitter Saturation Voltage VCE(SAT) — — -0.7 V IC = -500mA, IB = -50mA Base-Emitter Voltage VBE — — -1.2 V VCE = -1.0V, IC = -300mA Collector-Emitter Cutoff Current ICES — — -100 -5.0 nA µA VCE = -45V VCE = -25V, Tj = 150°C Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -4.0V Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA, f = 50MHz Collector-Base Capacitance CCBO — — 12 pF VCB = -10V, f = 1.0MHz Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm 2 area. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. E B C B C H G D K C B E Please click here to visit our online spice models database. |
Numéro de pièce similaire - BC807-xx-7-F |
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Description similaire - BC807-xx-7-F |
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