2SC4604_04 datasheet(3/4 Pages) TOSHIBA

No de pièce	2SC4604

Description	Power Amplifier Application Power Switching Applications.

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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2SC4604

2004-07-26

3

Collector current IC (A)

hFE – IC

Collector current IC (A)

VCE (sat) – IC

Collector-emitter voltage VCE (V)

IC – VCE

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

VBE (sat) – IC

Collector-emitter voltage VCE (V)

Safe Operating Area

Common emitter

Ta = 25°C

0

IB = 5 mA

100

1

2

3

70

1

2

3

4

10

20

30

15

50

Common emitter

VCE = 2 V

Ta = 100°C

0

1

2

3

4

5

−25

25

0

0.4

0.8

1.2

1.6

2.0

Common emitter

IC/IB = 20

Ta = 100°C

10 m

30 m

50 m

1

3

5

10

−25

25

1 m

3 m

10 m 30 m 100 m

1

3

10

300 m

Common emitter

VCE = 2 V

5

1 m

−25

25

10

30

100

300

500

50

3 m

10 m 30 m 100 m

1

3

Ta = 100°C

10

300 m

0.01

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated

linearly with increase in

temperature.

IC max (continuous)

IC max (pulsed)*

DC operation

Ta = 25°C

0.03

0.1

0.3

1

3

10

100

0.05

0.1

0.3

0.5

1

3

5

10

100 ms*

10 ms*

1 ms*

VCEO max

1 s*

30

Common emitter

IC/IB = 20

1 m

3 m

10 m 30 m 100 m

1

3

500 m

1

3

5

10

Ta = −25°C

25

100

100 m

300 m

10

300 m

Numéro de pièce similaire - 2SC4604_04

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SC4604	166Kb / 2P	NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

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Description similaire - 2SC4604_04

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Toshiba Semiconductor	2SA1298	311Kb / 4P	Low Frequency Power Amplifier Application Power Switching Applications
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Toshiba Semiconductor	2SA1735	179Kb / 4P	Power Amplifier Applications Power Switching Applications
Toshiba Semiconductor	2SC4409	150Kb / 4P	Power Amplifier Applications Power switching applications

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