2SC2873_04 datasheet(4/5 Pages) TOSHIBA

No de pièce	2SC2873

Description	Power Amplifier Applications Power Switching Applications

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SC2873

2004-07-07

4

Collector-emitter voltage VCE (V)

Safe Operating Area

IC – VBE

Base-emitter voltage VBE (V)

Ambient temperature Ta (°C)

2.0

1.6

1.2

0.8

0.4

0

0.5

1.0

1.5

2.0

Common emitter

VCE = 2 V

Ta

= 100°C

−55

25

PC – Ta

0

0.8

0.2

0.4

0.6

20

40

60

80

100

120

140

160

1.2

1.0

(1)

(2)

(1) Mounted on a ceramic

substrate (250 mm

2 × 0.8 t)

(2) No heat sink

0.1

3

0.3

5

1

10

100

30

10

30

50

100

300

500

1000

3000

5000

DC operation

Ta

= 25°C

IC max (pulse)*

IC max (continuous)

10 ms*

VCEO max

100 ms*

1 S*

1 ms*

*: Single no repetitive pulse

Ta

= 25°C

Curves must be derated linearly

with increase in temperature

Tested without a substrate

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Description similaire - 2SC2873_04

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2SC2873 Fiches technique(PDF) 4 Page - Toshiba Semiconductor

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