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2SA1721 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SA1721 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SA1721 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 5.5 pF (typ.) • Complementary to 2SC4497 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
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