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74LVC1G32FZ4-7 Fiches technique(PDF) 5 Page - Diodes Incorporated

No de pièce 74LVC1G32FZ4-7
Description  SINGLE 2 INPUT POSITIVE OR GATE
Download  14 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

74LVC1G32FZ4-7 Fiches technique(HTML) 5 Page - Diodes Incorporated

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74LVC1G32
SINGLE 2 INPUT POSITIVE OR GATE
74LVC1G32
Document number: DS32200 Rev. 2 - 2
5 of 14
www.diodes.com
October 2010
© Diodes Incorporated
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Vcc
Min
Typ.
Max
Unit
VOH
High Level Output
Voltage
IOH = -100μA
1.65V to 5.5V
VCC – 0.1
V
IOH = -4mA
1.65V
1.2
IOH = -8mA
2.3V
1.9
IOH = -16mA
3V
2.4
IOH = -24mA
2.3
IOH = -32mA
4.5V
3.8
VOL
High-level Input Voltage
IOL = 100μA
1.65V to 5.5V
0.1
V
IOL = 4mA
1.65V
0.45
IOL = 8mA
2.3V
0.3
IOL = 16mA
3V
0.4
IOL = 24mA
0.55
IOL = 32mA
4.5V
0.55
II
Input Current
VI = 5.5 V or GND
0 to 5.5V
± 5
μA
IOFF
Power Down Leakage
Current
VI or VO = 5.5V
0
± 10
μA
ICC
Supply Current
VI = 5.5V of GND
IO=0
1.65V to 5.5V
10
μA
ΔICC
Additional Supply
Current
One input at VCC
0.6 V Other inputs at
VCC or GND
3V to 5.5V
500
μA
Ci
Input Capacitance
Vi = VCC – or GND
3.3
4
pF
θJA
Thermal Resistance
Junction-to-Ambient
SOT25
(Note 5)
204
oC/W
SOT353
(Note 5)
371
oC/W
DFN1410
(Note 5)
430
oC/W
θJC
Thermal Resistance
Junction-to-Case
SOT25
(Note 5)
52
oC/W
SOT353
(Note 5)
143
oC/W
DFN1410
(Note 5)
190
oC/W
Notes:
5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.


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