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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SA1015 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SA1015 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SA1015 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.) (f = 1 kHz) • Complementary to 2SC1815. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −50 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA hFE (1) (Note) VCE = −6 V, IC = −2 mA 70 ⎯ 400 DC current gain hFE (2) VCE = −6 V, IC = −150 mA 25 80 ⎯ Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA ⎯ −0.1 −0.3 V Base-emitter saturation voltage VBE (sat) IC = −100 mA, IB = −10 mA ⎯ ⎯ −1.1 V Transition frequency fT VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4 7 pF Base intrinsic resistance rbb’ VCE = −10 V, IE = 1 mA, f = 30 MHz ⎯ 30 ⎯ Ω Noise figure NF VCE = −6 V, IC = −0.1 mA, RG = 10 kΩ, f = 1 kHz ⎯ 1.0 10 dB Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
Numéro de pièce similaire - 2SA1015_07 |
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Description similaire - 2SA1015_07 |
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