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TDA8946AJ Fiches technique(PDF) 7 Page - NXP Semiconductors |
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TDA8946AJ Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 20 page Philips Semiconductors TDA8946AJ 2 x 15 W BTL audio amplifier with DC gain control Product data Rev. 01 — 01 March 2002 7 of 20 9397 750 09434 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 8.6 Built-in protection circuits The TDA8946AJ contains two types of protection circuits, i.e. short-circuit and thermal shutdown. 8.6.1 Short-circuit protection Short-circuit to ground or supply line — This is detected by a so-called ‘missing current’ detection circuit which measures the current in the positive supply line and the current in the ground line. A difference between both currents larger than 0.8 A, switches the power stage to the standby mode; high impedance of the outputs and very low supply current. Short-circuit across the load — This is detected by an absolute-current measurement. An absolute-current larger than 2 A, switches the power stage to standby mode; high impedance of the outputs and a very low supply current. 8.6.2 Thermal shutdown protection The junction temperature is measured by a temperature sensor; at a junction temperature of approximately 150 °C this detection circuit switches the power stage to the standby mode; high impedance of the outputs and very low supply current. 9. Limiting values 10. Thermal characteristics [1] This is a typical value. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage no signal −0.3 +25 V operating −0.3 +18 V VI input voltage −0.3 VCC + 0.3 V IORM repetitive peak output current - 2 A Tstg storage temperature non-operating −55 +150 °C Tamb operating ambient temperature −40 +85 °C Ptot total power dissipation - 28 W VCC(sc) supply voltage to guarantee short-circuit protection -15 V Table 6: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-mb) thermal resistance from junction to mounting base both channels driven 2.5[1] K/W |
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