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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFB3206GPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB3206GPBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 8 page  12/05/08 Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free www.irf.com 1 IRFB3077GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits TO-220AB IRFB3077GPbF S D G GD S Gate Drain Source VDSS 75V RDS(on) typ. 2.8m: max. 3.3m : ID (Silicon Limited) 210A c ID (Package Limited) 120A PD - 96200 D S D G Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.402 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Max. 210 c 120 850 150 c 370 2.5 -55 to + 175 ± 20 2.5 10lbf xin (1.1Nxm) 300 A °C 200 See Fig. 14, 15, 22a, 22b, |
Numéro de pièce similaire - IRFB3206GPBF |
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Description similaire - IRFB3206GPBF |
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