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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFB3307ZGPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB3307ZGPBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 8 page  01/06/09 Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free www.irf.com 1 IRFB3307ZGPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET GD S Gate Drain Source S D G TO-220AB IRFB3307ZGPbF VDSS 75V RDS(on) typ. 4.6m : max. 5.8m : ID (Silicon Limited) 120Ac ID (Package Limited) 120A PD - 96212 D S D G Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.65 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 ––– 62 °C A 300 Max. 120 84 480 120 See Fig. 14, 15, 22a, 22b 140 230 6.7 -55 to + 175 ± 20 1.5 10lbf xin (1.1Nxm) |
Numéro de pièce similaire - IRFB3307ZGPBF |
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Description similaire - IRFB3307ZGPBF |
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