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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FP25R12W2T4 Fiches technique(PDF) 3 Page - Infineon Technologies AG |
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FP25R12W2T4 Fiches technique(HTML) 3 Page - Infineon Technologies AG |
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3 / 11 page  3 Technische Information / technical information FP25R12W2T4 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-07-23 revision: 2.2 Vorläufige Daten preliminary data IGBT-Brems-Chopper / IGBT-brake-chopper Höchstzulässige Werte / maximum rated values Kollektor-Emitter-Sperrspannung collector-emitter voltage TÝÎ = 25°C V†Š» 1200 V Kollektor-Dauergleichstrom DC-collector current T† = 100°C, TÝÎ = 175°C T† = 25°C, TÝÎ = 175°C I†ÒÓÑ I† 25 39 A A Periodischer Kollektor Spitzenstrom repetitive peak collector current t« = 1 ms I†ç¢ 50 A Gesamt-Verlustleistung total power dissipation T† = 25°C, TÝÎ = 175°C PÚÓÚ 175 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V•Š» +/-20 V Charakteristische Werte / characteristic values min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage I† = 25 A, V•Š = 15 V I† = 25 A, V•Š = 15 V I† = 25 A, V•Š = 15 V V†Š ÙÈÚ 1,85 2,15 2,25 2,25 V V V TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Gate-Schwellenspannung gate threshold voltage I† = 0,80 mA, V†Š = V•Š, TÝÎ = 25°C V•ŠÚÌ 5,2 5,8 6,4 V Gateladung gate charge V•Š = -15 V ... +15 V Q• 0,20 C Interner Gatewiderstand internal gate resistor TÝÎ = 25°C R•ÍÒÚ 0,00  Eingangskapazität input capacitance f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CÍþÙ 1,45 nF Rückwirkungskapazität reverse transfer capacitance f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V CØþÙ 0,05 nF Kollektor-Emitter Reststrom collector-emitter cut-off current V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C I†Š» 1,0 mA Gate-Emitter Reststrom gate-emitter leakage current V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C I•Š» 400 nA Einschaltverzögerungszeit (ind. Last) turn-on delay time (inductive load) I† = 25 A, V†Š = 600 V V•Š = ±15 V R•ÓÒ = 68  tÁ ÓÒ 0,08 0,08 0,08 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Anstiegszeit (induktive Last) rise time (inductive load) I† = 25 A, V†Š = 600 V V•Š = ±15 V R•ÓÒ = 68  tØ 0,042 0,051 0,053 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltverzögerungszeit (ind. Last) turn-off delay time (inductive load) I† = 25 A, V†Š = 600 V V•Š = ±15 V R•ÓËË = 68  tÁ ÓËË 0,34 0,44 0,46 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Fallzeit (induktive Last) fall time (inductive load) I† = 25 A, V†Š = 600 V V•Š = ±15 V R•ÓËË = 68  tË 0,18 0,215 0,225 s s s TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse I† = 25 A, V†Š = 600 V, L» = t.b.d. nH V•Š = ±15 V R•ÓÒ = 68  EÓÒ 3,90 5,00 5,40 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Abschaltverlustenergie pro Puls turn-off energy loss per pulse I† = 25 A, V†Š = 600 V, L» = t.b.d. nH V•Š = ±15 V R•ÓËË = 68  EÓËË 1,50 2,20 2,40 mJ mJ mJ TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C Kurzschlussverhalten SC data V•Š ù 15 V, V†† = 900 V V†ŠÑÈà = V†Š» -LÙ†Š · di/dt I»† 90 A TÝÎ = 150°C t« ù 10 s, Innerer Wärmewiderstand thermal resistance, junction to case pro IGBT / per IGBT RÚÌœ† 0,75 0,85 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro IGBT / per IGBT ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K) RÚ̆™ 0,70 K/W |
Numéro de pièce similaire - FP25R12W2T4 |
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Description similaire - FP25R12W2T4 |
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