SPI20N60CFD datasheet(7/12 Pages) INFINEON

No de pièce	SPI20N60CFD

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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7 / 12 page

200

7-02-01

Rev. 2.

5

Page 7

SP

I20N60CFD

9 Typ. gate charge

V

GS = f (QGate)

parameter: ID = 20.7 A pulsed

0

20

40

60

80

100

120 nC

150

Q

Gate

0

2

4

6

8

10

12

V

16

SPP20N60CFD

0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

I

F = f (V SD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

V

SD

-1

10

0

10

1

10

2

10

A

SPP20N60CFD

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

11 Avalanche SOA

I

AR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

5

10

A

20

Tj(Start)=25°C

Tj(Start)=125°C

12 Avalanche energy

E

AS = f (T j)

par.: ID = 10 A, VDD = 50 V

20

40

60

80

100

120

°C

160

T

j

0

50

100

150

200

250

300

350

400

450

500

550

600

mJ

750

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