SPI07N60S5 datasheet(2/12 Pages) INFINEON

No de pièce	SPI07N60S5

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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2 / 12 page

200

9-11-27

Rev. 2.

7

Page 2

SPP07N60S5

SPI07N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 480 V, ID = 7.3 A, Tj = 125 °C

dv/dt

20

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

1.5

K/W

Thermal resistance, junction - ambient, leaded

RthJA

-

62

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold

-

260

°C

Electrical Characteristics,

at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

600

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=7.3A

-

700

-

Gate threshold voltage

VGS(th)

ID=350µΑ, VGS=VDS

3.5

4.5

5.5

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Tj=25°C,

Tj=150°C

-

0.5

-

1

100

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A,

Tj=25°C

Tj=150°C

-

0.54

1.46

0.6

-

Ω

Gate input resistance

RG

f

=1MHz, open Drain

-

19

-

Numéro de pièce similaire - SPI07N60S5

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	SPI07N60S5	332Kb / 12P	Cool MOS??Power Transistor Rev. 2.1 2004-03-30
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Infineon Technologies A...	SPI07N60S5	108Kb / 10P	Cool MOS??Power Transistor 2002-07-26

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SPI07N60S5 Fiches technique(PDF) 2 Page - Infineon Technologies AG

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