SPI12N50C3 datasheet(4/14 Pages) INFINEON

No de pièce	SPI12N50C3

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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4 / 14 page

200

9-11-30

Rev.

3.

1

Page 4

SPP12N50

C3

SPI12N50C3, SPA12N50C3

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Inverse diode continuous

forward current

IS

TC=25°C

-

11.6 A

Inverse diode direct current,

pulsed

ISM

-

34.8

Inverse diode forward voltage

VSD

VGS=0V, IF=IS

-

1

1.2

V

Reverse recovery time

trr

VR=400V, IF=IS ,

diF/dt=100A/µs

-

380

-

ns

Reverse recovery charge

Qrr

-

5.5

-

µC

Peak reverse recovery current

Irrm

-

38

-

A

Peak rate of fall of reverse

recovery current

dirr/dt

Tj=25°C

-

1100

-

A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit

Symbol

Value

Unit

SPP_I

SPA

SPP_I

SPA

Rth1

0.015

0.15

K/W

Cth1

0.0001878

0.0001878 Ws/K

Rth2

0.03

Cth2

0.0007106

Rth3

0.056

Cth3

0.000988

Rth4

0.197

0.194

Cth4

0.002791

Rth5

0.216

0.413

Cth5

0.007285

0.007401

Rth6

0.083

2.522

Cth6

0.063

0.412

External H eatsink

Tj

Tcase

Tamb

Cth1

Cth2

R th1

Rth,n

Cth,n

Ptot (t)

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