BAT15-04R datasheet(3/5 Pages) INFINEON

No de pièce	BAT15-04R

Description	Silicon RF Schottky Diodes

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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3 / 5 page

2009-05-13

3

BAT15-04R*

Diode capacitance CT = ƒ (VR)

f = 1MHz

0

1

2

V

4

VR

0

0.05

0.1

0.15

0.2

pF

0.3

Reverse current IR = ƒ(VR)

TA = Parameter

-50

-25

0

25

50

°C

100

TA

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

A

Forward Voltage VF = ƒ (TA)

IF = Parameter

-50

-25

0

25

50

°C

100

TA

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

V

0.5

100µA

1mA

10mA

Forward current IF = ƒ (VF)

TA = 25°C

0

0.2

0.4

0.6

V

1

VF

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

A

Numéro de pièce similaire - BAT15-04R

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BAT15-04	67Kb / 3P	Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
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	BAT15-043H	134Kb / 8P	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)
	BAT15-043P	134Kb / 8P	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications)

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BAT15-04R Fiches technique(PDF) 3 Page - Infineon Technologies AG

BAT15-04R Fiches technique(HTML) 3 Page - Infineon Technologies AG

Numéro de pièce similaire - BAT15-04R

Description similaire - BAT15-04R

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