STX23NM60ND_10 datasheet(3/18 Pages) STMICROELECTRONICS

No de pièce	STX23NM60ND

Description	N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247

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STB/I/F/P/W23NM60ND

Electrical ratings

Doc ID 14367 Rev 3

3/18

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, I²PAK

TO-220, TO-247

TO-220FP

VDS

Drain-source voltage (VGS=0)

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

19.5

19.5 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

11.7

11.7 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

78

78 (1)

A

PTOT

Total dissipation at TC = 25 °C

150

35

W

dv/dt (3)

3.

ISD ≤ 19.5 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

40

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

D²PAK

I²PAK

TO-220 TO-247 TO-220FP

Unit

Rthj-case

Thermal resistance junction-

case max

0.83

3.6

°C/W

Rthj-amb

Thermal resistance junction-

amb max

62.5

50

62.5

°C/W

Tl

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

9A

EAS

Single pulse avalanche energy

(starting Tj= 25 °C, ID = IAS, VDD = 50 V)

700

mJ

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