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STGB18N40LZ Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STGB18N40LZ
Description  EAS 180 mJ - 390 V - internally clamped IGBT
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB18N40LZ Fiches technique(HTML) 3 Page - STMicroelectronics

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STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
Electrical ratings
Doc ID 14322 Rev 5
3/19
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
IPAK
D²PAK
I²PAK, TO-220
VCES
Collector-emitter voltage (vGE = 0)
VCES(clamped)
V
VECS
Emitter collector voltage (VGE = 0)
20
V
IC
(1)
1.
Calculated according to the iterative formula
Collector current (continuous) at TC = 100 °C
25
30
A
ICP
(2)
2.
Pulse width limited by max. junction temperature allowed
Pulsed collector current
40
A
VGE
Gate-emitter voltage
VGE(clamped)
V
PTOT
Total dissipation at TC = 25 °C
125
150
W
EAS
Single pulse energy TC= 25 °C, L = 3 mH, VCC = 50 V
300
mJ
EAS
Single pulse energy TC=150 °C, L = 3 mH, VCC = 50 V
180
mJ
ESD
Human body model, R= 1.5 k
Ω, C = 100 pF
8
kV
Machine model, R = 0, C = 100 pF
800
V
Charged device model
2
kV
Tstg
Storage temperature
– 55 to 175
°C
Tj
Operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
IPAK
D²PAK
I²PAK, TO-220
Rthj-case Thermal resistance junction-case
1.2
1
°C/W
Rthj-amb Thermal resistance junction-ambient
100
62.5
°C/W
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=


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