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BAS21SLT1G Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce BAS21SLT1G
Description  Dual Series High Voltage Switching Diode
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BAS21SLT1G Fiches technique(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1
Publication Order Number:
BAS21SLT1/D
BAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
250
Vdc
Repetitive Peak Reverse Voltage
VRRM
250
Vdc
Peak Forward Current
IF
225
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
1
2
3
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21SLT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
JT M G
G
JT = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)


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