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BAS21SLT1G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BAS21SLT1G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: BAS21SLT1/D BAS21SLT1G Dual Series High Voltage Switching Diode Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Repetitive Peak Reverse Voltage VRRM 250 Vdc Peak Forward Current IF 225 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping† ORDERING INFORMATION SOT−23 CASE 318 STYLE 11 MARKING DIAGRAM 1 2 3 3 CATHODE/ANODE ANODE 1 CATHODE 2 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BAS21SLT1G SOT−23 (Pb−Free) 3000/Tape & Reel *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 JT M G G JT = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) |
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