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BZX55C9V1 Fiches technique(PDF) 1 Page - EIC discrete Semiconductors

No de pièce BZX55C9V1
Description  SILICON ZENER DIODES
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Fabricant  EIC [EIC discrete Semiconductors]
Site Internet  http://www.eicsemi.com
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BZX55C9V1 Fiches technique(HTML) 1 Page - EIC discrete Semiconductors

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BZX55C2V0 ~ BZX55C100
SILICON ZENER DIODES
VZ : 2.0 - 100 Volts
PD : 500 mW
FEATURES :
* Complete 2.0 to 100 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram (approx.)
MAXIMUM RATINGS
Rating at 25
°C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
Power Dissipation (Note1)
PD
500
mW
Maximum Forward Voltage at IF =100 mA
VF
1.0
V
Maximum Thermal Resistance Junction to Ambient Air (Note1)
R
θJA
300
°C/W
Junction Temperature Range
Tj
- 65 to + 200
°C
Storage Temperature Range
Ts
- 65 to + 200
°C
Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Page 1 of 2
Rev. 05 : June 25, 2005
DO - 35
Dimensions in inches and ( millimeters )
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
1.00 (25.4)
min.


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