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BYD57MA Fiches technique(PDF) 1 Page - EIC discrete Semiconductors

No de pièce BYD57MA
Description  ULTRA-FAST SOFT-RECOVERY CONTROLLED AVALANCHE RECTIFIERS
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Fabricant  EIC [EIC discrete Semiconductors]
Site Internet  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

BYD57MA Fiches technique(HTML) 1 Page - EIC discrete Semiconductors

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BYD57DA - BYD57VA
ULTRA-FAST SOFT-RECOVERY
CONTROLLED AVALANCHE RECTIFIERS
PRV : 200 - 1400 Volts
Io : 1.0 - 1.2 Amperes
FEATURES :
* Glass passivated junction chip
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
BYD
BYD
BYD
BYD
BYD
BYD
BYD
57DA
57GA
57JA
57KA
57MA
57UA
57VA
Maximum Repetitive Peak Reverse Voltage
VRRM
200
400
600
800
1000 1200 1400
V
Maximum Continuous Reverse Voltage
VR
200
400
600
800
1000 1200 1400
V
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA
V(BR)R-min
300
500
700
900
1100 1300 1500
V
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)
IFSM
A
Maximum Repetitive Peak Forward Current at Ttp = 85 °C
IFRM
A
Maximum Forward Voltage at IF = 1.0 A ; TJ = 25 °C
VF
V
Maximum Reverse Current at VR =VRRMmax
TJ = 25 °C
IR
μA
TJ = 165 °C
IR(H)
μA
Maximum Reverse Recovery Time (Note 4)
Trr
ns
Thermal Resistance from Junction to Tie-Point
Rth j-tp
K / W
Thermal Resistance from Junction to Ambient (Note 5)
Rth j-a
K / W
Junction Temperature Range
TJ
°C
Storage Temperature Range
TSTG
°C
Notes :
(1) Ttp = 85 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6.
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6.
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; VR = VRRMmax
(4) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 μm.
Page 1 of 3
Rev. 00 : February 13, 2008
- 65 to + 175
5.0
100
30
150
- 65 to + 175
75
30
150
A
UNIT
1.2
(1)
1.0
(1)
0.4
(2)
RATING
SYMBOL
IF(AV)
2.3
3.6
11
8.5
5
2.0
± 0.2
2.1
± 0.2
SMA (DO-214AC)
1.2
± 0.2
2.6
± 0.15
Dimensions in millimeters
1.1
± 0.3
0.2
± 0.07
IATF 0060636
SGS TH07/1033
TW00/17276EM
TH97/10561QM


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