STP7NM80 datasheet(4/17 Pages) STMICROELECTRONICS

No de pièce	STP7NM80

Description	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STD7NM80-1, STD7NM80, STF7NM80, STP7NM80

4/17

Doc ID 12573 Rev 3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

±100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 3.25 A

0.95

1.05

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID= 3.25 A

-

4

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

-

620

460

15

-

pF

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

Open drain

-7

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=640 V, ID = 6.5 A

VGS =10 V

(see Figure 19)

-

18

4

11

-

nC

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