STB9NK90Z_10 datasheet(4/17 Pages) STMICROELECTRONICS

No de pièce	STB9NK90Z

Description	N-channel 900 V, 1.1 廓, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH??Power MOSFET

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Electrical characteristics

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z

4/17

Doc ID 9479 Rev 7

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

900

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating @125 °C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V, VDS = 0

±

10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 3.6 A

1.1

1.3

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

-

2115

190

40

-

pF

Coss eq

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 720 V

-

115

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 720 V, ID = 8 A

VGS =10 V

Figure 20

-

72

14

38

-

nC

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