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2SK3278 Fiches technique(PDF) 1 Page - Sanyo Semicon Device |
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2SK3278 Fiches technique(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK3278 No.6680-1/4 Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN6680 2SK3278 Package Dimensions unit : mm 2083B [2SK3278] N3000 TS IM TA-2613 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET DC/DC Converter Applications 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 5.0 6.5 0.85 0.7 0.6 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Continued on next page. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3 [2SK3278] unit : mm 2092B |
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