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SD103BWS Fiches technique(PDF) 1 Page - EIC discrete Semiconductors |
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SD103BWS Fiches technique(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page SD103AWS - SD103CWS SCHOTTKY BARRIER DIODES FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * These diodes are also available in the MiniMELF case with type designations LL103A thru LL103C. * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g * SD103AWS Marking Code : S4 * SD103BWS Marking Code : S5 * SD103CWS Marking Code : S6 Maximum Ratings and Thermal Characteristics (T C = 25 °C unless otherwise noted) Symbol Value Unit SD103AWS 40 SD103BWS 30 SD103CWS 20 Maximum Single Cycle Surge 10 µs Square Wave IFSM 2A Power Dissipation (Infinite Heat Sink) Ptot 150 (1) mW Thermal Resistance Junction to Ambient Air RθJA 650 (1) °C/W Junction Temperature TJ 125 (1) °C Storage temperature range TSTG -55 to + 150 °C Electrical Characteristics (T J = 25°C unless otherwise noted) Parameter Symbol Min Typ Max Unit SD103AWS VR = 30 V -- 5 SD103BWS VR = 20 V -- 5 SD103CWS VR = 10 V -- 5 IF = 20mA - - 0.37 IF = 200mA - - 0.60 Junction Capacitance Ctot - 50 - pF IF = IR = 50mA to 200mA recover to 0.1IR Note: (1) Valid provided that electrodes are kept at ambient temperature. Page 1 of 2 Rev. 01 : May 4, 2006 Test Condition Reverse Current IR Forward Voltage Drop V Parameter VRRM Repetitive Peak Reverse Voltage μA VF V VR = 0 V, f = 1MHz Reverse Recovery Time Trr ns -10 - 2.80 2.30 1.80 1.60 Dimensions in millimeters SOD-323 Certificate TH97/10561QM Certificate TW00/17276EM |
Numéro de pièce similaire - SD103BWS |
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Description similaire - SD103BWS |
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