Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STF7N52K3 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STF7N52K3
Description  N-channel 525 V, 0.84 OHM, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET
Download  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF7N52K3 Fiches technique(HTML) 4 Page - STMicroelectronics

  STF7N52K3 Datasheet HTML 1Page - STMicroelectronics STF7N52K3 Datasheet HTML 2Page - STMicroelectronics STF7N52K3 Datasheet HTML 3Page - STMicroelectronics STF7N52K3 Datasheet HTML 4Page - STMicroelectronics STF7N52K3 Datasheet HTML 5Page - STMicroelectronics STF7N52K3 Datasheet HTML 6Page - STMicroelectronics STF7N52K3 Datasheet HTML 7Page - STMicroelectronics STF7N52K3 Datasheet HTML 8Page - STMicroelectronics STF7N52K3 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 18 page
background image
Electrical characteristics
STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3
4/18
Doc ID 14896 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
525
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 3.1 A
0.84
0.98
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
737
110
10
-
pF
pF
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
-198
-
pF
Co(er)
(2)
2.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-126
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6 A,
VGS = 10 V
(see
Figure 20)
-
34
4.4
15
-
nC
nC
nC


Numéro de pièce similaire - STF7N52K3

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STF7N52K3 STMICROELECTRONICS-STF7N52K3 Datasheet
380Kb / 15P
   N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
More results

Description similaire - STF7N52K3

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STB7N52K3 STMICROELECTRONICS-STB7N52K3 Datasheet
380Kb / 15P
   N-channel 525 V, 0.84 廓, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3??Power MOSFET
STB3N62K3 STMICROELECTRONICS-STB3N62K3_09 Datasheet
554Kb / 20P
   N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
CD00251512 STMICROELECTRONICS-CD00251512 Datasheet
930Kb / 16P
   N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220
STD6N52K3 STMICROELECTRONICS-STD6N52K3 Datasheet
249Kb / 12P
   N-channel 525 V, 1 廓, 5 A, DPAK, TO-220FP SuperMESH3??Power MOSFET
logo
List of Unclassifed Man...
STU5N52K3 ETC2-STU5N52K3 Datasheet
1Mb / 23P
   N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK
logo
STMicroelectronics
STB3N62K3 STMICROELECTRONICS-STB3N62K3 Datasheet
567Kb / 19P
   N-channel 620 V, 2.2 廓 , 2.7 A SuperMESH3??Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STP4N52K3 STMICROELECTRONICS-STP4N52K3 Datasheet
1Mb / 2P
   N-channel 525 V, 2.5 A, 2.1typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
February 2013 Rev 2
STF7NM60N STMICROELECTRONICS-STF7NM60N Datasheet
885Kb / 17P
   N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
STD4N52K3 STMICROELECTRONICS-STD4N52K3 Datasheet
1Mb / 21P
   N-channel 525 V, 2.5 A, 2.1 廓 typ., SuperMESH3??Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STF3LN62K3 STMICROELECTRONICS-STF3LN62K3 Datasheet
1Mb / 21P
   N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK
February 2011 Rev 1
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com