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STF3N62K3 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STF3N62K3
Description  N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF3N62K3 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Electrical characteristics
Doc ID 14894 Rev 2
5/20
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
620
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 1.4 A
2.2
2.5
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 1.4 A
-
2.1
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
-
385
55
6
-
pF
pF
pF
COSS eq
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 496 V
-
32.3
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
10
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 2.7 A,
VGS = 10 V
(see
Figure 17)
-
13
2.5
7.5
-
nC
nC
nC
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 310 V, ID =1.7 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 16)
-
9
6.8
22
15.6
-
ns
ns
ns
ns


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