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STF3N62K3 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STF3N62K3 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 20 page STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3 Electrical characteristics Doc ID 14894 Rev 2 5/20 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 620 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on resistance VGS = 10 V, ID = 1.4 A 2.2 2.5 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15 V, ID = 1.4 A - 2.1 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 385 55 6 - pF pF pF COSS eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 496 V - 32.3 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 10 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 17) - 13 2.5 7.5 - nC nC nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID =1.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) - 9 6.8 22 15.6 - ns ns ns ns |
Numéro de pièce similaire - STF3N62K3 |
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Description similaire - STF3N62K3 |
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