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BUK7505-30A Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce BUK7505-30A
Description  TrenchMOS transistor Standard level FET
Download  8 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK7505-30A Fiches technique(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TrenchMOS
™ transistor
BUK7505-30A
Standard level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a plastic envelope using
V
DS
Drain-source voltage
30
V
’trench’ technology which features
I
D
Drain current (DC)
75
A
very low on-state resistance. It is
P
tot
Total power dissipation
230
W
intended for use in automotive and
T
j
Junction temperature
175
˚C
general
purpose
switching
R
DS(ON)
Drain-source on-state
5
m
applications.
resistance
V
GS = 10 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
30
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-30
V
±V
GS
Gate-source voltage
-
-
20
V
I
D
Drain current (DC)
T
mb = 25 ˚C
-
75
A
I
D
Drain current (DC)
T
mb = 100 ˚C
-
75
A
I
DM
Drain current (pulse peak value)
T
mb = 25 ˚C
-
400
A
P
tot
Total power dissipation
T
mb = 25 ˚C
-
230
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
0.65
K/W
mounting base
R
th j-a
Thermal resistance junction to
Minimum footprint, FR4
50
-
K/W
ambient
board
d
g
s
12 3
tab
September 1999
1
Rev 1.100


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