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BUK7505-30A Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUK7505-30A Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7505-30A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage 30 V ’trench’ technology which features I D Drain current (DC) 75 A very low on-state resistance. It is P tot Total power dissipation 230 W intended for use in automotive and T j Junction temperature 175 ˚C general purpose switching R DS(ON) Drain-source on-state 5 m Ω applications. resistance V GS = 10 V PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 30 V V DGR Drain-gate voltage R GS = 20 kΩ -30 V ±V GS Gate-source voltage - - 20 V I D Drain current (DC) T mb = 25 ˚C - 75 A I D Drain current (DC) T mb = 100 ˚C - 75 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 400 A P tot Total power dissipation T mb = 25 ˚C - 230 W T stg, Tj Storage & operating temperature - - 55 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 0.65 K/W mounting base R th j-a Thermal resistance junction to Minimum footprint, FR4 50 - K/W ambient board d g s 12 3 tab September 1999 1 Rev 1.100 |
Numéro de pièce similaire - BUK7505-30A |
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Description similaire - BUK7505-30A |
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