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BTA416Y-800C Fiches technique(PDF) 7 Page - NXP Semiconductors |
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BTA416Y-800C Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BTA416Y_SER_B_C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 March 2008 7 of 12 NXP Semiconductors BTA416Y series B and C 16 A 3-quadrant triacs insulated, high commutation, high temperature 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter Conditions BTA416Y-600B BTA416Y-800B BTA416Y-600C BTA416Y-800C Unit Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 500 - - V/ µs VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit 600 - - 300 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) =16A; without snubber; gate open circuit 15 - - 10 - - A/ms VDM = 400 V; Tj = 150 °C; IT(RMS) =16A; without snubber; gate open circuit 6 - - 4 - - A/ms tgt gate-controlle d turn-on time ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs -2 --2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 50 0 001aag168 0.8 1.2 1.6 VGT 0.4 VGT(25°C) Tj (°C) −50 150 100 050 001aag165 1 2 3 0 (1) (2) (3) IGT IGT(25°C) |
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Description similaire - BTA416Y-800C |
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