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BUK101-50GL Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BUK101-50GL
Description  PowerMOS transistor
Download  11 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK101-50GL Fiches technique(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK101-50GL
Logic level TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Continuous off-state drain source
V
IS = 0 V
-
50
V
voltage
V
IS
Continuous input voltage
-
0
6
V
I
D
Continuous drain current
T
mb ≤ 25 ˚C; VIS = 5 V
-
26
A
I
D
Continuous drain current
T
mb ≤ 100 ˚C; VIS = 5 V
-
16
A
I
DRM
Repetitive peak on-state drain current
T
mb ≤ 25 ˚C; VIS = 5 V
-
100
A
P
D
Total power dissipation
T
mb ≤ 25 ˚C
-
75
W
T
stg
Storage temperature
-
-55
150
˚C
T
j
Continuous junction temperature
1
normal operation
-
150
˚C
T
sold
Lead temperature
during soldering
-
250
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
2
for valid protection
4
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS = 5 V
-
50
V
Short circuit load protection
V
DDP(P)
Protected drain source supply voltage
3
V
IS = 5 V
-
35
V
P
DSM
Instantaneous overload dissipation
T
mb = 25 ˚C
-
1.3
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
Repetitive peak clamping current
V
IS = 0 V
-
26
A
E
DSM
Non-repetitive clamping energy
T
mb ≤ 25 ˚C; IDM = 26 A;
-
625
mJ
V
DD ≤ 20 V; inductive load
E
DRM
Repetitive clamping energy
T
mb ≤ 95 ˚C; IDM = 8 A;
-
40
mJ
V
DD ≤ 20 V; f = 250 Hz
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
1 A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
2 The input voltage for which the overload protection circuits are functional.
3 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 2.600


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