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BUK101-50GL Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK101-50GL Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 11 page Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Continuous off-state drain source V IS = 0 V - 50 V voltage V IS Continuous input voltage - 0 6 V I D Continuous drain current T mb ≤ 25 ˚C; VIS = 5 V - 26 A I D Continuous drain current T mb ≤ 100 ˚C; VIS = 5 V - 16 A I DRM Repetitive peak on-state drain current T mb ≤ 25 ˚C; VIS = 5 V - 100 A P D Total power dissipation T mb ≤ 25 ˚C - 75 W T stg Storage temperature - -55 150 ˚C T j Continuous junction temperature 1 normal operation - 150 ˚C T sold Lead temperature during soldering - 250 ˚C OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V ISP Protection supply voltage 2 for valid protection 4 - V Over temperature protection V DDP(T) Protected drain source supply voltage V IS = 5 V - 50 V Short circuit load protection V DDP(P) Protected drain source supply voltage 3 V IS = 5 V - 35 V P DSM Instantaneous overload dissipation T mb = 25 ˚C - 1.3 kW OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I DROM Repetitive peak clamping current V IS = 0 V - 26 A E DSM Non-repetitive clamping energy T mb ≤ 25 ˚C; IDM = 26 A; - 625 mJ V DD ≤ 20 V; inductive load E DRM Repetitive clamping energy T mb ≤ 95 ˚C; IDM = 8 A; - 40 mJ V DD ≤ 20 V; f = 250 Hz ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω 1 A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 The input voltage for which the overload protection circuits are functional. 3 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V DDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. January 1993 2 Rev 2.600 |
Numéro de pièce similaire - BUK101-50GL |
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Description similaire - BUK101-50GL |
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