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BUK7507-30B Fiches technique(PDF) 7 Page - NXP Semiconductors |
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BUK7507-30B Fiches technique(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors BUK75/7607-30B TrenchMOS™ standard level FET Product data Rev. 01 — 07 April 2003 7 of 15 9397 750 11232 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03nm89 0 100 200 300 02 46 8 10 VDS (V) ID (A) 10 20 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 Label VGS (V) 03nk83 4 6 8 10 12 5 101520 VGS (V) RDSon (m Ω) 03nm90 0 5 10 15 20 0 100 200 300 ID (A) RDSon (m Ω) Label is VGS (V) 6 6.5 7 7.5 8 9 10 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 C ° () ----------------------------- = |
Numéro de pièce similaire - BUK7507-30B |
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Description similaire - BUK7507-30B |
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