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BUK7509-75A Fiches technique(PDF) 6 Page - NXP Semiconductors

No de pièce BUK7509-75A
Description  TrenchMOS standard level FET
Download  15 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK7509-75A Fiches technique(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
Product specification
Rev. 02 — 06 November 2000
6 of 15
9397 750 07655
© Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = −100 A/µs
VGS = −10 V; VDS =30V
75
ns
Qr
recovered charge
270
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb51
0
50
100
150
200
250
300
350
400
02
46
8
10
VDS (V)
ID
(A)
4.5
5.5
6.5
7.5
8.5
9.5
10
20
16 12
VGS (V) =
03nb50
4
5
6
7
8
9
10
11
12
510
15
20
VGS (V)
RDSon
(m
Ω)
03nb52
6
8
10
12
14
16
18
0
40
80
120 160 200 240 280 320 360
ID (A)
RDSon
(m
Ω)
5.5
6
6.5
7
8
9
10
VGS (V) =
03nb25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=


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