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2SJ585LS Fiches technique(PDF) 1 Page - Sanyo Semicon Device |
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2SJ585LS Fiches technique(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Ordering number:ENN6412 2SJ585LS SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80300TS (KOTO) TA-2756 No.6412–1/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2078B [2SJ585LS] Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS PW ≤10µs, duty cycle≤1% Continued on next page. Tc=25 °C 10.0 0.9 1.2 0.75 4.5 2.8 2.55 2.55 1 2 3 3.2 0.7 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e c r u o S - o t - n i a r DV S S D 0 5 2 –V e g a t l o V e c r u o S - o t - e t a GV S S G 0 3 ±V ) C D ( t n e r r u C n i a r DID 5 . 6 –A ) e s l u P ( t n e r r u C n i a r DI P D 6 2 –A n o i t a p i s s i D r e w o P e l b a w o ll APD 0 . 2W 0 3W e r u t a r e p m e T l e n n a h Ch c T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r B e c r u o S - o t - n i a r DV S S D ) R B ( ID V , A m 1 – = S G 0 =0 5 2 –V e g a t l o V n w o d k a e r B e c r u o S - o t - e t a GV S S G ) R B ( IG V , A µ 0 0 1 ± = S D 0 =0 3 ±V t n e r r u C n i a r D e g a t l o V e t a G - o r e ZI S S D V S D V , V 0 5 2 – = S G 0 =0 0 1 –A µ t n e r r u C e g a k a e L e c r u o S - o t - e t a GI S S G V S G V , V 5 2 ± = S D 0 =0 1 ±A µ e g a t l o V f f o t u CV S G ) f f o (V S D I , V 0 1 – = D A m 1 – =5 . 3 –0 . 5 –V e c n a t t i m d A r e f s n a r T d r a w r o F| s f y |V S D I , V 0 1 – = D A 5 . 3 – =4 . 20 . 4S e c n a t s i s e R e t a t S - n O e c r u o S - o t - n i a r D c i t a t SR S D ) n o (ID V , A 5 . 3 – = S G V 0 1 – =6 5 . 07 . 0 Ω |
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