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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7750GPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7750GPBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 8 page  HEXFET® Power MOSFET HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Interna- tional Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. IRF7750GPbF Description l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile ( < 1.1mm) l Available in Tape & Reel l Lead-Free l Halogen-Free Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±4.7 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V ±3.8 A IDM Pulsed Drain Current ±38 PD @TA = 25°C Power Dissipation 1.0 PD @TA = 70°C Power Dissipation 0.64 Linear Derating Factor 0.008 W/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Max. Units RθJA Maximum Junction-to-Ambient 125 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 05/14/09 TSSOP-8 #Ã2ÃB "Ã2ÃT !Ã2ÃT Ã2Ã9 ! " # $ % & ' $Ã2ÃB! %Ã2ÃT! &Ã2ÃT! 'Ã2Ã9! VDSS = -20V RDS(on) = 0.030Ω PD-96144A |
Numéro de pièce similaire - IRF7750GPBF |
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Description similaire - IRF7750GPBF |
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